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Thin Film Deposition depends on many factors and it important for material properties. Different factors such as Substrate Temperature, Gas Composition, Flow Direction , Pressure, Reactor Geometry, Electrode Configuration, Power Level and Frequency.
Plasma Generation.
Occurs at 10^-5 to 10^-3 Torr with an ionization ratio 10^-3 to 10^-1
RF plasma Ionization Ration 10^-6 to 10^-4
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1) Temperature of the Reactors is measured by thermocouples or optical pyrometers.
2) Quantities & Compositions of gas flow rates are monitored by rotameters. Presently electronic gas flow meters are used which have the advantage of process automation.
3) The pressure can be varied by changing flow rates of gases entering the reactor, while keeping the pumping rate constant or changing the pumping speed by using a throttle valve.
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1) Reactor Deposition Chamber
2) Electronic Power Source
3) Impedance Matching Network
4) Gas Flow Regulators
5) Pressure Measurement
6) Panel Instrumentation
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Hot Wall reactors are tubular in design. Have low gas velocities and are used and a fully developed laminar flow exists. A gas panel supplies chemical, dopants and carrier gases.
Used to deposit polysilicon , Silicon Dioxide and Silion Nitride films.
(350-450 C). LTR's are used in Semiconductor processing. Deposits passivation layers like Silicon Nitride over Aluminum. Dilute gases are being supplied and are usually mixed and dispersed at the point of entry. Mixed gas passes over the heated substrates. Heat is supplied by R.F or Resistance Heating.
Requires: Careful optimization of dynamics to obtain uniform thickness and compositions.
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